Request a Quote for Raytheon Company Part Number PA60403-1 with the NSN 5962-01-294-2220

Part Number: PA60403-1

Alternate P/N: PA604031

Manufacturer: Raytheon Company

NSN: 5962-01-294-2220

NIIN: 012942220

Item Name : Microcircuit Memory

CAGE Code: 82577

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country : USA

NCB Code : 01

Maintenance Parts Pro is pleased to offer procurement options for Raytheon Company part number PA60403-1, a Microcircuit Memory product we carry that is listed with the NSN 5962-01-294-2220 for seamless identification. As this item is available for purchase today, be sure to fill out and submit the Request for Quote (RFQ) form on this page if you are interested in obtaining pricing information. All that we ask is that you share details like your budget, desired quantity, and expected fulfillment speed so that we can respond with the most fitting solutions for your comparisons.

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Alongside streamlined quotation processes, we aim to support our customers by providing as much relevant listing information and data with product offerings as possible. For example, part number PA60403-1 specifically traces back to Raytheon Company through CAGE Code 82577, as well as belongs to the FSC [FSC] as per its NSN of 5962-01-294-2220. Referencing such details, you can locate and procure exact specifications with ease. With our various practices in mind, do not hesitate to request a quote on part number PA60403-1 using our provided form.

Characteristics Data of NSN 5962-01-294-2220, 5962012942220

MRC	Criteria	Characteristic
MEMORY	ABKW	OVERALL HEIGHT0 345 INCHES MINIMUM AND 0 425 INCHES MAXIMUM
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 04 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN14 INPUT
MEMORY	CRHL	BIT QUANTITY65536
MEMORY	CSWJ	WORD QUANTITY8192
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT