Maintenance Parts Pro is pleased to offer procurement options for Fairchild Semiconductor Corp part number FA3413U, a Semiconductordeviceset product we carry that is listed with the NSN 5961-00-526-7975 for seamless identification. As this item is available for purchase today, be sure to fill out and submit the Request for Quote (RFQ) form on this page if you are interested in obtaining pricing information. All that we ask is that you share details like your budget, desired quantity, and expected fulfillment speed so that we can respond with the most fitting solutions for your comparisons.
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Alongside streamlined quotation processes, we aim to support our customers by providing as much relevant listing information and data with product offerings as possible. For example, part number FA3413U specifically traces back to Fairchild Semiconductor Corp through CAGE Code 07263, as well as belongs to the FSC [FSC] as per its NSN of 5961-00-526-7975. Referencing such details, you can locate and procure exact specifications with ease. With our various practices in mind, do not hesitate to request a quote on part number FA3413U using our provided form.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-526-7975 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 005267975 | 0 | N | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| FA3413U | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,REPETITIVE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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