Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-262-0193 (012620193) |
NCB Code | USA (01) |
Manufacturer | Fujitsu America Inc, Dla Land And Maritime, Msis Semiconductor Inc, Raytheon Company, Lockheed Martin Corporation, Raytheon Technical Services Company, Advanced Micro Devices Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
MB8168-55 | fujitsu america inc | microcircuit memory | 3r731 | RFQ |
5962-8608101BRB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101BRX | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-86081 | dla land and maritime | microcircuit memory | 67268 | RFQ |
AM2168-55-BRA | msis semiconductor inc | microcircuit memory | 0hw02 | RFQ |
5962-8608101RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101BRA | dla land and maritime | microcircuit memory | 67268 | RFQ |
717367-61 | raytheon company | microcircuit memory | 05869 | RFQ |
7546405P502 | lockheed martin corporation | microcircuit memory | 99971 | RFQ |
5962-8608101RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
A984-1 | raytheon technical services company | microcircuit memory | 36378 | RFQ |
AM2168-55 BRA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
CQSJ | INCLOSURE MATERIAL | METAL OR CERAMIC OR PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 20 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
Relevant Components for NSN - 5962-01-262-0193, 5962012620193 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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