| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-068-0687 (000680687) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Northrop Grumman Systems Corporation, Raytheon Company, Morris Material Handling Inc, Litton Systems Inc, Edo Corp, General Electric Company, Fairchild Semiconductor Corp, Thales Defense And Security Inc, Philips Electronics North American, Miltope Corporation, Kollsman Inc, Joint Army-Navy Specifications, Rockwell Collins Aerospace, Itt Telecom Products Corp, Raytheon E Systems Inc, Inspektorat Wsparcia Sil Zbrojnych, Hewlett-Packard Company, United States Department Of The Army, Freescale Semiconductor Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N3828A | military specifications | semiconductor device diode | 81349 | RFQ |
| 1080H82H14 | northrop grumman systems corporation | semiconductor device diode | 04804 | RFQ |
| 4178600-277 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 1N3828A | morris material handling inc | semiconductor device diode | 27315 | RFQ |
| MIL-S-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| 947220-1053 | litton systems inc | semiconductor device diode | 13973 | RFQ |
| JAN1N3828A | edo corp | semiconductor device diode | 00752 | RFQ |
| 1N1766A | general electric company | semiconductor device diode | 09214 | RFQ |
| 19A115528P1 | general electric company | semiconductor device diode | 08771 | RFQ |
| JAN1N3828A | military specifications | semiconductor device diode | 81349 | RFQ |
| IN3828A | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N3828A | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
| 848142-0620 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| 16A21 | philips electronics north american | semiconductor device diode | 0zbj4 | RFQ |
| 1N3828B | military specifications | semiconductor device diode | 81349 | RFQ |
| M57-84 | miltope corporation | semiconductor device diode | 54418 | RFQ |
| 1N1485 | military specifications | semiconductor device diode | 81349 | RFQ |
| 68415016108 | kollsman inc | semiconductor device diode | 89944 | RFQ |
| 1N3828A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| 353-9010-050 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 539564 | itt telecom products corp | semiconductor device diode | 21340 | RFQ |
| 303-0157 | raytheon e systems inc | semiconductor device diode | 33875 | RFQ |
| 5961PL0190095 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| JAN1N3828A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| 16A21 | hewlett-packard company | semiconductor device diode | 52983 | RFQ |
| Z496 | united states department of the army | semiconductor device diode | 12255 | RFQ |
| JAN1N3828A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3828 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3828A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.371 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 41.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 146.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-068-0687, 5961000680687 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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